Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements-Reference-Cited by-同舟云学术

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Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements

Published:2024-06 Issue:2 Volume:24 Page:168-173
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Waltl Michael¹^ORCID,Stampfer Bernhard²^ORCID,Grasser Tibor²^ORCID

Affiliation:

1. Christian Doppler Laboratory for Single-Defect Spectroscopy, TU Wien, Vienna, Austria

2. Institute for Microelectronics, TU Wien, Vienna, Austria

Funder

Austrian Federal Ministry of Labour and Economy

Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung

Christian Doppler Forschungsgesellschaft

Take-Off Program of the Austrian Research Promotion Agency FFG

TU Wien Bibliothek for Financial Support through its Open Access Funding Programme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7298/10566496/10517280.pdf?arnumber=10517280

Reference36 articles.

1. NBTI degradation: From physical mechanisms to modelling

2. The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing

3. Origin of NBTI variability in deeply scaled pFETs

4. A single-trap study of PBTI in SiON nMOS transistors: Similarities and differences to the NBTI/pMOS case

5. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

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