Design Space Exploration of FeRAM Bit Cell for DRAM Application-Reference-Cited by-同舟云学术

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Design Space Exploration of FeRAM Bit Cell for DRAM Application

Published:2024-09 Issue:9 Volume:71 Page:5380-5387
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Oh Hyungrock¹^ORCID,Xiang Yang¹^ORCID,Redondo Fernando Garcia¹^ORCID,Gupta Mohit Kumar²,Perumkunnil Manu¹^ORCID,Bardon Marie Garcia¹^ORCID,Dhiman Amit¹,Gowda Sathisha Nanjunde¹,Walke Amey¹^ORCID,Fantini Andrea¹,Yasin Farrukh¹^ORCID,Kar Gouri Sankar¹,Hellings Geert¹^ORCID,Dehaene Wim¹^ORCID

Affiliation:

1. imec, Leuven, Belgium

2. Axelera Ai, Leuven, Belgium

Funder

IMEC’s industrial affiliation program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10634300.pdf?arnumber=10634300

Reference40 articles.

1. Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory

2. 1T-1C Dynamic Random Access Memory Status, Challenges, and Prospects

3. DRAM—Challenging history and future;Woo

4. Study on the Sub-Threshold Margin Characteristics of the Extremely Scaled 3-D DRAM Cell Transistors

5. Flipping bits in memory without accessing them: An experimental study of DRAM disturbance errors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM;IEEE Transactions on Electron Devices;2024-08

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