Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers-Reference-Cited by-同舟云学术

Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers

Published:2024-03 Issue:3 Volume:71 Page:2253-2256
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Zhen-Jin¹^ORCID,Ye Xin-Liang²,Tu Wei-Chen³^ORCID,Yang Chih-Chiang⁴^ORCID,Su Yan-Kuin⁴^ORCID

Affiliation:

1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan

2. Epileds Technologies, Inc., Tainan, Taiwan

3. Department of Electrical Engineering, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan, Taiwan

4. Department of Electrical Engineering, Green Energy Technology Research Center, Kun Shan University, Yongkang, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10411849.pdf?arnumber=10411849

Reference17 articles.

1. A Review of LED Drivers and Related Technologies

2. Review—Phosphor Plates for High-Power LED Applications: Challenges and Opportunities toward Perfect Lighting

3. Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

4. Highly efficient GaN-based high-power flip-chip light-emitting diodes

5. Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode

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