High Selectivity and Wide Range UV Photodetection in PEDOT:PSS/ Lu₀.₂₇Sn₀.₇₃O/ZnO Heterojunction
Author:
Affiliation:
1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, China
2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10482422/10458062.pdf?arnumber=10458062
Reference37 articles.
1. Bright Future of Deep-Ultraviolet Photonics: Emerging UVC Chip-Scale Light-Source Technology Platforms, Benchmarking, Challenges, and Outlook for UV Disinfection
2. Rational Synthesis of Solid‐State Ultraviolet B Emitting Carbon Dots via Acetic Acid‐Promoted Fractions of sp 3 Bonding Strategy
3. Low-dimensional wide-bandgap semiconductors for UV photodetectors
4. Switch type PANI/ZnO core-shell microwire heterojunction for UV photodetection
5. Wafer-scale synthesis of wide bandgap 2D GeSe2 layers for self-powered ultrasensitive UV photodetection and imaging
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