Performance Enhancement of NiO<sub> <i>x</i> </sub>/β-Ga₂O₃ Heterojunction Diodes by Synergistic Interface Engineering-Reference-Cited by-同舟云学术

Performance Enhancement of NiO_x/β-Ga₂O₃ Heterojunction Diodes by Synergistic Interface Engineering

Published:2024-08 Issue:8 Volume:71 Page:4578-4583
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Dinghe¹,Zhang Zeyulin¹^ORCID,Chen Hao¹,Tian Xusheng¹^ORCID,Wang Yao¹,Yan Yiru¹,Zeng Liru¹,Liu Xinke²^ORCID,Chen Dazheng¹^ORCID,Feng Qian¹^ORCID,Zhou Hong¹^ORCID,Liu Zhihong¹,Zhang Jincheng¹^ORCID,Zhang Chunfu¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an, China

2. College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, China

Funder

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Natural Science Basic Research Program of Shaanxi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10582888.pdf?arnumber=10582888

Reference40 articles.

1. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

2. Power semiconductor device figure of merit for high-frequency applications

3. Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

4. 1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

5. Emerging Electrochemical Energy Applications of Graphdiyne