Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors
Author:
Affiliation:
1. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/16/10566499/10550164.pdf?arnumber=10550164
Reference32 articles.
1. SiC Power Device Evolution Opening a New Era in Power Electronics
2. An Adaptive DC Voltage Control for SiC based Medium Voltage Photovoltaic Inverter
3. Immersion Oil Cooling Method of Discrete SiC Power Device in Electric Vehicle
4. Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs
5. High Temperature Stability and the Performance Degradation of SiC MOSFETs
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