Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation-Reference-Cited by-同舟云学术

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Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation

Published:2024-08 Issue:8 Volume:71 Page:4543-4548
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Feng Zixuan¹^ORCID,Feng Shiwei¹^ORCID,Pan Shijie¹^ORCID,Li Xuan²^ORCID,You Binyu¹,Zhang Boyang¹,Wang Yaning¹,Zhang Yamin¹^ORCID,Zheng Xiang³^ORCID

Affiliation:

1. College of Microelectronics, Beijing University of Technology, Beijing, China

2. Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China

3. Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.

Funder

National Natural Science Foundation of China

Beijing Municipal Education Commission

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10559824.pdf?arnumber=10559824

Reference35 articles.

1. Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling

2. Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

3. On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

4. Radiation Effects in GaN-Based High Electron Mobility Transistors

5. GaN HEMT for Space Applications

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