Ultrafast (50 ns) ID –VG Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator-Reference-Cited by-同舟云学术

Ultrafast (50 ns) I_D –V_G Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator

Published:2024-05 Issue:5 Volume:71 Page:3009-3014
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jung Taeseung¹,Nam Sooji²,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon, South Korea

2. Reality Device Research Division, Electronics and Telecommunications Research Institute, Yuseong-gu, Daejeon, Republic of Korea

Funder

National Research Foundation of Korea

National Research Foundation of Korea (NRF) grant funded by Korea Government [Ministry of Science and ICT (MSIT)]

BK21 FOUR through the Connected AI Education and Research Program for Industry and Society Innovation, Korea Advanced Institute of Science and Technology Electrical Engineering

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10478833.pdf?arnumber=10478833

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