High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP₂Se₆/Ga₂O₃ van der Waals Heterostructure-Reference-Cited by-同舟云学术

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High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP₂Se₆/Ga₂O₃ van der Waals Heterostructure

Published:2024-08 Issue:8 Volume:71 Page:5089-5095
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lei Leitao¹,Zheng Xiaohong²^ORCID,Zhou Yan-Hong¹^ORCID,Chen Ke-Qiu³^ORCID

Affiliation:

1. College of Science, East China Jiao Tong University, Nanchang, China

2. College of Information Science and Technology, Nanjing Forestry University, Nanjing, China

3. Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Jiangxi Postgraduate Innovation Special Fund Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10559952.pdf?arnumber=10559952

Reference39 articles.

1. Physics of thin-film ferroelectric oxides

2. Ferroic tunnel junctions and their application in neuromorphic networks

3. Ferroelectric Tunnel Memristor

4. Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory

5. A ferroelectric tunnel junction based on the piezoelectric effect for non-volatile nanoferroelectric devices

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