Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure-Reference-Cited by-同舟云学术

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Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure

Published:2024-07 Issue:7 Volume:71 Page:4093-4101
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ahmed Nadim¹^ORCID,Dutta Gourab¹^ORCID

Affiliation:

1. Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, India

Funder

SRIC, IIT Kharagpur under ISIRD Scheme

Science and Engineering Research Board (SERB), Department of Science and Technology, Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10566499/10539085.pdf?arnumber=10539085

Reference29 articles.

1. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

2. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

3. Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

4. Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

5. p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

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