400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V-Reference-Cited by-同舟云学术

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400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

Published:2014-06 Issue:6 Volume:35 Page:654-656
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kizilyalli Isik C.,Edwards Andrew P.,Nie Hui,Bui-Quang Phong,Disney Donald,Bour Dave

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6819100/06812134.pdf?arnumber=6812134

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3. SiC and GaN Power Semiconductor Devices;Power Electronics Handbook;2024

4. 1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-12

5. Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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