Influence of Introducing Symmetric Underlap on Analog Performance of Dual Gate AlGaN/GaN MOS-HEMT-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Influence of Introducing Symmetric Underlap on Analog Performance of Dual Gate AlGaN/GaN MOS-HEMT

Published:2023-09-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA)
language:
Short-container-title:

Author:

Banerjee Amrita¹,Mitra Rajrup²,Roy Akash³,Kundu Atanu⁴,Kar Mousiki⁴,Chatterjee Soumyo⁴

Affiliation:

1. TATA Consultancy Services Limited,Kolkata,West Bengal,India,700156

2. Iowa State University,Department Of Electrical And Computer Engineering,USA

3. University Of Southern California,Viterbi School Of Engineering,USA

4. Heritage Institute of Technology,Department of ECE,Kolkata,West Bengal,India,700107

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10294327/10295052/10295199.pdf?arnumber=10295199

Reference14 articles.

1. Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

2. The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

3. Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

4. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

5. Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V);freedsman;Applied Physics Express,2014

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP