A GaN/Diamond HEMTs with 23 W/mm for Next Generation High Power RF Application
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8697340/8700641/08700882.pdf?arnumber=8700882
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis of nano-diamond film on GaN surface with low thermal boundary resistance and high thermal conductivity;Carbon;2024-10
2. Enhanced etching of GaN with N 2 gas addition during CVD diamond growth;Functional Diamond;2024-08-16
3. Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations;Surfaces and Interfaces;2024-03
4. Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT;Microelectronics Reliability;2024-01
5. Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics;IEEE Transactions on Device and Materials Reliability;2023-12
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