Numerical Analysis for High-Speed Hybrid- Modulation Semiconductor Laser Integrated With Passive Waveguide
Author:
Affiliation:
1. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
2. NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/3/10538339/10587307.pdf?arnumber=10587307
Reference37 articles.
1. High-Speed Modulation Lasers for 100GbE Applications
2. 50-Gb/s Direct Modulation of a 1.3-μm InGaAlAs-Based DFB Laser With a Ridge Waveguide Structure
3. Ultra-wideband Butterfly Directly Modulated Semiconductor Lasers
4. Directly Modulated Semiconductor Lasers
5. 112-Gb/s PAM-4 Uncooled (25°C to 85°C) Directly Modulation of 1.3-μm InGaAlAs-MQW DFB BH Lasers with Record High Bandwidth
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