Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors-Reference-Cited by-同舟云学术

Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors

Published:2024-06 Issue:3 Volume:60 Page:1-5
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Li Chuang¹^ORCID,Liu Hezhuang¹,Wang Jingyi²^ORCID,Guo Daqian¹^ORCID,Chen Baile²^ORCID,Wu Jiang³^ORCID

Affiliation:

1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China

2. School of Information Science and Technology, ShanghaiTech University, Shanghai, China

3. Institute of Fundamental and Frontier Sciences, and the State Key Laboratory of ElectronicThin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Special Funding from Sichuan Postdoctoral Research Project

Innovation Group Project of Sichuan Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/3/10485567/10488471.pdf?arnumber=10488471

Reference31 articles.

1. Short-wave infrared photodetector

2. Shortwave-infrared (SWIR) emitters for biological imaging: a review of challenges and opportunities

3. Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

4. Low-Frequency Noise Spectroscopy Characterization of HgCdTe Infrared Detectors

5. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice

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