Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering
Author:
Affiliation:
1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China
2. School of Physics and Technology, Wuhan University, Wuhan, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Natural Science Foundation of Sichuan Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/3/10438219/10419331.pdf?arnumber=10419331
Reference26 articles.
1. Optimization of electro-optical characteristics of GaAs-based oxide confinement VCSEL
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4. Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario
5. Large data centers interconnect bottlenecks
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1. Advances in high-power vertical-cavity surface-emitting lasers;Journal of Physics D: Applied Physics;2024-06-07
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