A Geometrical Optimization Rule of the Synaptic Pass-Transistor for a Low Power Analog Accelerator
Author:
Affiliation:
1. Department of Electronics Engineering, Pusan National University, Pusan, South Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science
Link
http://xplorestaging.ieee.org/ielx7/6287639/9668973/09743929.pdf?arnumber=9743929
Reference36 articles.
1. Towards the first adversarially robust neural network model on MNIST;schott;arXiv 1805 09190,2018
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1. A Bias‐Dependent Weight Update Characteristics of Low Power Synaptic Pass‐Transistors with a Hf‐Doped ZnO Channel Layer;Advanced Electronic Materials;2024-06-04
2. Operating region-dependent characteristics of weight updates in synaptic In–Ga–Zn–O thin-film transistors;Scientific Reports;2022-12-12
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