6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates-Reference-Cited by-同舟云学术

6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates

Published:2021-06 Issue:6 Volume:31 Page:748-751
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Liu Wenjian^ORCID,Romanczyk Brian,Guidry Matthew^ORCID,Hatui Nirupam,Wurm Christian,Li Weiyi^ORCID,Shrestha Pawana^ORCID,Zheng Xun,Keller Stacia,Mishra Umesh K.^ORCID

Funder

Office of Naval Research

Defense Advanced Research Projects Agency

UCSB HFM Lab supported by ONR (Dr. Paul Maki) and ARO (Dr. James Harvey) DoD DURIP Grants

UCSB Nanofabrication Facility, an Open Access Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9448609/09381279.pdf?arnumber=9381279

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1. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07

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