Downsizing of Ferroelectric-Gate Field-Effect-Transistors for Ferroelectric-NAND Flash Memory Cells
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5871161/5873182/05873239.pdf?arnumber=5873239
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3. All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory;Science China Information Sciences;2023-07-04
4. Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors;Materials;2019-01-28
5. 3.3 V write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors with 109endurance and good retention;Japanese Journal of Applied Physics;2017-02-27
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