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Electron and hole mobility enhancement in strained SOI by wafer bonding

  • Published:2002-09 Issue:9 Volume:49 Page:1566-1571
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:en
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Lijuan Huang ,Chu J.O.,Goma S.A.,D'Emic C.P.,Koester S.J.,Canaperi D.F.,Mooney P.M.,Cordes S.A.,Speidell J.L.,Anderson R.M.,Wong H.-S.P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

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