InP-Based Tunnel Junctions for Microconcentrator Photovoltaics-Reference-Cited by-同舟云学术

InP-Based Tunnel Junctions for Microconcentrator Photovoltaics

Published:2023-11 Issue:6 Volume:13 Page:819-824
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Schmieder Kenneth J.¹^ORCID,Mood Thomas C.²,Armour Eric A.³^ORCID,Bennett Mitchell F.⁴,Stevens Margaret A.¹^ORCID,Diaz Martin³,Pulwin Ziggy³,Lumb Matthew P.⁴

Affiliation:

1. US Naval Research Laboratory, Washington, DC, USA

2. Jacobs, Hanover, MD, USA

3. Veeco Instruments, Somerset, NJ, USA

4. George Washington University, Washington, DC, USA

Funder

Air Force Research Laboratory Space Vehicles Directorate

Advanced Research Projects Agency - Energy

U.S. Department of Energy

Jerome and Isabella Karle Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/5503869/10309876/10246256-aam.pdf

Reference19 articles.

1. Study of P-type carbon doping on In 0.53 Ga 0.47 As, In 0.52 Al 0.2 Ga 0.28 As, and In 0.52 Al 0.48 As

2. Carbon doping of InAlAs in LP-MOVPE using CBr4

3. Design and demonstration of ultra-compact microcell concentrating photovoltaics for space

4. InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

5. Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

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