A Novel Approach to Enhance the Performance of TFET using Metal Strip Layer for High-Frequency Applications-Reference-Cited by-同舟云学术

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A Novel Approach to Enhance the Performance of TFET using Metal Strip Layer for High-Frequency Applications

Published:2023-12-07 Issue: Volume: Page:339-344
ISSN:
Container-title:2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom)
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Author:

Chandan Bandi Venkata¹,Dharmender ²,Nigam Kaushal Kumar³

Affiliation:

1. JNTU,School of Nano Technology Institute of Science and Technology,Kakinada,A.P,India

2. G.L Bajaj Institute of Technology and Management,Department of Electronics and Communication Engineering,Gr. Noida,U.P,India

3. National Institute of Technology (NIT),Department of Electronics and Telecommunication Engineering,Raipur,Chhattisgarh,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10458705/10458718/10458819.pdf?arnumber=10458819

Reference17 articles.

1. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

4. Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor

5. Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

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