TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection
Author:
Affiliation:
1. ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136
2. Texas Instruments,Dallas,TX,75243
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118271.pdf?arnumber=10118271
Reference18 articles.
1. Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons
2. Defect production and lifetime control in electron and γ‐irradiated silicon
3. ESD in Silicon Integrated Circuits
4. TCAD simulations of irradiated power diodes over a wide temperature range
5. Silicon Thyristors for Ultrahigh Power (GW) Applications
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