Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage-Reference-Cited by-同舟云学术

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Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

Published:2024 Issue: Volume:12 Page:651-657
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Malavena Gerardo¹^ORCID,Amoroso Salvatore M.²^ORCID,Brown Andrew R.²^ORCID,Asenov Plamen²,Lin Xi-Wei²^ORCID,Moroz Victor²,Giulianini Mattia¹,Refaldi David¹^ORCID,Monzio Compagnoni Christian¹^ORCID,Spinelli Alessandro S.¹^ORCID

Affiliation:

1. Dipartimento di Elettronica, Politecnico di Milano, Informazione e Bioingegneria, Milan, Italy

2. Synopsys Inc., Mountain View, CA, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10643153.pdf?arnumber=10643153

Reference34 articles.

1. Reviewing the Evolution of the NAND Flash Technology

2. High-Density Solid-State Storage: A Long Path to Success

3. A high-performance 1Tb 3b/cell 3D-NAND Flash with a 194MB/s write throughput on over 300 layers;Kim;ISSCC Dig. Tech.,2023

4. A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density

5. Challenges of Flash Memory for Next Decade

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise;IEEE Journal of the Electron Devices Society;2024

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