Direct-Write NiO RRAM Cells-Reference-Cited by-同舟云学术

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Direct-Write NiO RRAM Cells

Published:2024-05-28 Issue: Volume: Page:704-709
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Howard-Jennings Jordan¹,Al-Haidari Riadh²,Enakerakpo Emuobosan²,Obeidat Abdullah²,Bell Kevin³,Rovere Tom³,Gonya Stephen⁴,Alhendi Mohammed⁴,Poliks Mark⁴

Affiliation:

1. Binghamton University,Materials Science & Engineering Program,Binghamton,NY,United States

2. Binghamton University,Department of Systems Science & Industrial Engineering,Binghamton,NY,United States

3. Lockheed Martin Corporation,Lockheed Martin Rotary and Mission Systems,Owego,NY,United States

4. Binghamton University,The Center for Advanced Microelectronics Manufacturing,Binghamton,NY,United States

Funder

Air Force Research Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565029.pdf?arnumber=10565029

Reference32 articles.

1. Overview of emerging nonvolatile memory technologies

2. Flash Memory Integration: Performance and Energy Considerations;Boukhobza,2017

3. NAND Flash Memory Revolution

4. Challenges of Flash Memory for Next Decade

5. Extreme Ultraviolet Process Optimization for Contact Layer of 14 nm Node Logic and 16 nm Half Pitch Memory Devices

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