A High-Frequency Online Junction Temperature Monitoring Method for SiC mosfets Based on on-State Resistance With Aging Compensation
Author:
Affiliation:
1. Tsinghua University, Beijing, China
2. Department of Electrical Engineering, State Key Laboratory of Control and Simulation of Power System and Generation Equipment, Beijing, China
3. GE Global Research, Niskayuna, NY, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
http://xplorestaging.ieee.org/ielx7/41/10048563/09889078.pdf?arnumber=9889078
Reference32 articles.
1. Online Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices
2. Turn-on Delay Based Real-Time Junction Temperature Measurement for SiC MOSFETs With Aging Compensation
3. An Online Junction Temperature Monitoring Method for SiC MOSFETs Based on a Novel Gate Conduction Model
4. Sensing Power MOSFET Junction Temperature Using Gate Drive Turn-On Current Transient Properties
5. A Novel Online Chip-Related Aging Monitoring Method for IGBTs Based on the Leakage Current
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1. A Junction Temperature Smoothing Control Method for SiC MOSFETs Based on the Gate Driving Signal Delay;IEEE Transactions on Industrial Electronics;2024-03
2. A Novel Junction Temperature Estimation Method for SiC MOSFET Considering Device Aging Effect;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10
3. A Digital Twin Based Condition Monitoring Method for Power Modules of Inverters;2023 26th International Conference on Electrical Machines and Systems (ICEMS);2023-11-05
4. A Junction Temperature and Package Aging Decoupling Evaluating Method for SiC MOSFETs Based on the Turn-on Drain-Source Current Overshoot;IEEE Transactions on Power Electronics;2023-11
5. An Approach for Online Estimation of On-State Resistance in SiC MOSFETs Without Current Measurement;IEEE Transactions on Power Electronics;2023-09
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