Fully-Depleted Silicon-on-Insulator Devices for Radiation Dosimetry in Cancer Therapy-Reference-Cited by-同舟云学术

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Fully-Depleted Silicon-on-Insulator Devices for Radiation Dosimetry in Cancer Therapy

Published:2014-12 Issue:6 Volume:61 Page:3443-3450
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Li Yulong,Porter Warren M.,Kshirsagar Chaitanya,Roth Ivan,Su Yang,Reynolds Margaret A.,Gerbi Bruce J.,Koester Steven J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/23/6976033/06954547.pdf?arnumber=6954547

Reference40 articles.

1. Time-dependent hole and electron trapping effects in SIMOX buried oxides

2. Determination of the charge-trapping characteristics of buried oxides using a 10-keV X-ray source

3. RF telemetry system for an implantable bio-MEMS sensor

4. UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs

5. High-Q FDSOI varactors for wireless radiation sensing

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5. Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement;2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC);2018-11

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