Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-based MOSFETs
Author:
Affiliation:
1. The University of Toledo,EECS Dept,Toledo,OH,USA
2. U.S. Naval Research Laboratory,Washington, DC,USA
Funder
Office of Naval Research
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10977026/10977027/10977219.pdf?arnumber=10977219
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5. Challenges and opportunities for high-power and high-frequency algan/gan high-electron-mobility transistor (hemt) applications: A review;Haziq,2022
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