Evaluation of the influence of hydrogen-dilution ratio and doping on the properties of a-SiGe:H films-Reference-Cited by-同舟云学术

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Evaluation of the influence of hydrogen-dilution ratio and doping on the properties of a-SiGe:H films

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

Ascencio-Hurtado Carlos R.¹,Torres Alfonso¹,Ambrosio Roberto²,Moreno Mario¹,Arenas-Hernandez Alba¹

Affiliation:

1. Instituto Nacional de Astrofísica, Óptica y Electrónica,Electronics Department,72840, Puebla,México

2. Benemérita Universidad Autónoma de Puebla,Electronics Department,72570, Puebla,México

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9908144/9907765/09908236.pdf?arnumber=9908236

Reference24 articles.

1. Biocompatibility and surface properties of hydrogenated amorphous silicon-germanium thin films prepared by LF-PECVD

2. Thin-film amorphous silicon germanium solar cells with p- and n-type hydrogenated silicon oxide layers

3. Improving the performance of hydrogenated amorphous silicon solar cell using a-SiGe:H alloy;idda;Journal of Ovonic Research,2019

4. Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display

5. Flexible Electronics: The Next Ubiquitous Platform

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of Si-Based Thin Films and Materials for Thermoelectric Energy Harvesting and Their Integration into Electronic Devices for Energy Management Systems;Eng;2023-05-15

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