InGaN/GaN量子阱悬空微盘发光二极管

Author:

ZHU Gangyi 朱刚毅,NING Bo 宁波,QIU Guoqing 仇国庆,GUO Chunxiang 郭春祥,YANG Ying 杨颖,LI Xin 李欣,LI Binghui 李炳辉,SHI Zheng 施政,DAI Jun 戴俊,QIN Feifei 秦飞飞,WANG Yongjin 王永进

Publisher

Shanghai Institute of Optics and Fine Mechanics

Reference30 articles.

1. High-efficiency spectral-beam-combined 930 nm diode laser source;Yichen XU;Chinese Physics Letters,2020

2. Reduction of electron leakage of AlGaN-based deep ultraviolet laser diodes using an inverse-trapezoidal electron blocking layer;Zhongqiu XING;Chinese Physics Letters,2020

3. Diode pumped rubidium laser based on etalon effects of alkali cell windows;Zhiyong LI;Chinese Physics Letters,2020

4. GaN microdisk with direct coupled waveguide for unidirectional whispering-gallery mode emission;TO Chaphang;Optics Letters,2020

5. Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures;A V CHERVYAKOV;Semiconductors,2010

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