Photoemission of InGaN nanowire array photocathode assisted by external electric field

Abstract

An external electric field-assisted method is proposed to improve the electron collection capability of InGaN photocathode. We use the diffusion drift equation to calculate the photoemission performance of the nanowire arrays. The results show that nanowire array has better electron collection ability with the aid of external electric field. When the incidence angle is 88∘ and 70∘, the quantum efficiency and collection efficiency reach the maximum respectively. When the external electric field is 0.6[Formula: see text]V/[Formula: see text]m, the maximum collection efficiency is 34.2%. Compared with no electric field, the electron collection ratio increased by 69.4%. The external electric field- assisted InGaN photocathode can significantly improve the photoelectric emission performance, which is expected to be realized in future experiments.