A Theoretical Analysis of Spin-Dependent Tunneling in ZnO-Based Heterostructures

Abstract

The electron tunneling in ZnO/ZnCdO semiconductor heterostructure is studied using the matrix method. The spin-polarization is examined due to Dresselhaus spin–orbit interaction and Rashba spin–orbit interaction. The total spin-polarization is mainly due to Dresselhaus spin–orbit interaction and the Rashba spin–orbit interaction is small. The high degree of spin polarization can be achieved at a high barrier width. With the increasing cadmium concentration in this heterostructure, the spin polarization efficiency is enhanced. The dwell time is reported and discussed.