Flexoelectricity in oxide thin films

Author:

Shen Guoyang1ORCID,Liang Renhong1ORCID,Wang Zhiguo1ORCID,Liu Zhiyong2,Shu Longlong1ORCID

Affiliation:

1. School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China

2. School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063, P. R. China

Abstract

Flexoelectric effect describes the electromechanical coupling between the strain gradient and its internal polarization in all dielectrics. Despite this universality, the resulting flexoelectric field remains small at the macroscopic level. However, in nanosystems, the size-dependent effect of flexoelectricity becomes increasingly significant, leading to a notable flexoelectric field that can strongly influence the material’s physical properties. This review aims to explore the flexoelectric effect specifically at the nanoscale. We achieve this by examining strain gradients generated through two distinct methods: internal inhomogeneous strain and external stimulation. In addition, advanced synthesis techniques are utilized to enhance the properties and functionalities associated with flexoelectricity. Furthermore, we delve into other coupled phenomena observed in thin films, including the coupling and utilization of flexomagnetic and flexophotovoltaic effects. This review presents the latest advancements in these areas and highlights their role in driving further breakthroughs in the field of flexoelectricity.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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