Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission

Author:

Yu Ying12,Zha Guo-Wei134,Shang Xiang-Jun134,Yang Shuang134,Sun Ban-Quan134,Ni Hai-Qiao134,Niu Zhi-Chuan134

Affiliation:

1. State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. State Key Laboratory of Optoelectronic Materials and Technologies, School of electronics and information technology, Sun Yat-sen University, Guangzhou 510275, China

3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Hefei 230026, China

4. Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, 230026, China

Abstract

Abstract In this chapter, we discuss the epitaxial growth of self-assembled quantum dots (QDs) in GaAs nanowires (NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/AlGaAs core–shell NWs, branched GaAs NWs and tailored nanostructured morphologies on the NW facets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NW facet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single AlGaAs quantum ring (QR) on the NW facet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical fibers to achieve all-fiber-output single-photon sources for potential application in quantum integrated networks.

Funder

National Key Basic Research Program of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Oxford University Press (OUP)

Subject

Multidisciplinary

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