Several Approaches to Bipolar Oxide Diodes with High Rectification-Reference-Cited by-同舟云学术

Several Approaches to Bipolar Oxide Diodes with High Rectification

Published:2014-10-31 Issue: Volume: Page:
ISSN:1662-0356
Container-title:Advances in Science and Technology
language:
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Author:

Grundmann Marius¹,Schein Friedrich Leonard¹,Karsthof Robert¹,Schlupp Peter¹,von Wenckstern Holger¹

Affiliation:

1. Universität Leipzig

Abstract

We report on advances in the fabrication of high quality bipolar heterodiodes with oxideelectrodes. The highest rectification above 1010 is obtained for a structure from a-ZCO/ZnO/ZnO:Alon Al2O3 (a-ZCO: amorphous ZnCo2O4). Rectification better than 106, a value larger than reportedfor all previous attempts, is obtained for our a-ZCO/a-ZTO (a-ZTO: amorphous zinc tin oxide), a-NiO/ZnO and CuI/ZnO diodes. The ZCO/ZnO has been used as gate in JFETs with ZnO as channel.The bipolar diodes open the field of oxide semiconductor electronics to applications in photovoltaics.

Publisher

Trans Tech Publications Ltd

Link

https://www.scientific.net/AST.93.252.pdf

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