Affiliation:
1. Korea Research Institute of Chemical Technology
2. Chungnam National University
Abstract
In general, Electrostatic chuck (ESC) was used to fix and clamp the silicon wafer with
electrostatic force in the semiconductor fabrication process. Recently, due to their excellent chemical
and plasma stability and high thermal conductivity, sintered ceramics has been used as an insulator
material in the configuration of ESC. However, metals of high melting point, such as Mo, W, still
used for electrode materials. Because of the thermal mismatch between metal electrode and ceramic
insulator, micro cracks were produced at the interface during sintering process of ceramic or its
operation process with high temperature, which leads to reduce the life time of ESC. To improve the
compatibility between metal and ceramic, mesh type metal electrode was used in ESC but this type of
electrode results in inhomogeneous electrostatic force. Homogeneous clamping force is very
important to determine the final quality of semiconductor. We have investigated a ceramic
electrostatic chuck composed of conducting ceramic electrode of titanium nitride instead of metal
electrode. Aluminum nitride was added to titanium nitride to control the thermal expansion
coefficient. This composite electrode shows not only a good electrical conductivity but also an
excellent compatibility to dielectric layer. Compatibility between the electrode and dielectric layer
enable to design the electrode with continuous sheet type which leads to homogeneous electrostatic
force. Electrostatic force of ceramic ESC with conducting ceramic electrode was about 1700gf/4inch
wafer when the applied voltage was DC 3kV.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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