Research on the Precision Machining on SiC-Reference-Cited by-同舟云学术

Research on the Precision Machining on SiC

Published:2014-02 Issue: Volume:900 Page:601-604
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Xiao Qiang¹,He Xue Li²

Affiliation:

1. Xi’an Technological University

2. Shannxi Normal University

Abstract

SiC material removal mechanism and ELID grinding mechanism is analyzed, the character and condition of brittle to ductile transition of SiC single crystal, the critical depth of cut, and surface formation mechanism of ductile mode grinding of SiC single crystal are studied, the experiment results show that ELID grinding can realize ductile grinding ,this will lower the surface damage and improve the machining efficiency.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.900.601.pdf

Reference5 articles.

1. Xiao Q, Research on the Material Removal Rates and Surface Features of SiC Single Crystal by Ultrasonic Polishing[J], Journal of Synthetic Crystals, Vol. 40, No. 4, August, 2011, 496-199.

2. Li Y, Wang X Y, Experiments of Ultrasonic-assisted Wire Sawing of SiC Single Crystal, Journal of Synthetic Crystals, Vol. 41 No. 4, August, 2012, 1076-1081.

3. N. Itoh, Grinding Characteristics of Hard and Brittle Materials by Fine Grain Lapping Wheels with ELID, Journal of Materials Processing Technology 62(4)(1996)315–320.

4. K. Fathima, A. S. Kumar, , A study on Wear Mechanism and Wear Reduction Strategies in Grinding Wheels Used for ELID Grinding, Wear 254(12)(2003)1247–1255.

5. Chen Z M, Semiconductor Introduction[M]. Electronic Industry Press, 2008：217~218.

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