Epitaxial growth of n-type β-FeSi<sub>2</sub> thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions-Reference-Cited by-同舟云学术

Epitaxial growth of n-type β-FeSi<sub>2</sub> thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions

Published:2015 Issue:0 Volume:3 Page:011102-011102
ISSN:2758-2450
Container-title:JJAP Conference Proceedings
language:en
Short-container-title:JJAP Conf. Proc.

Author:

M. Mostafa Tarek¹,Takahara Motoki¹,Baba Ryuji¹,Funasaki Suguru¹,Shaban Mahmoud²,Promros Nathaporn³,Tominaga Aki¹,Nishibori Maiko⁴,Yoshitake Tsuyoshi¹

Affiliation:

1. Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

2. Department of Electrical Engineering, Aswan Faculty of Engineering, Aswan University, Aswan 81542, Egypt

3. Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand

4. Research Center for Synchrotron Light Applications, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

Publisher

The Japan Society of Applied Physics

Link

https://www.jstage.jst.go.jp/article/jjapcp/3/0/3_011102/_pdf

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