Research on characteristics of RC-IGBT with low switching energy consumption
Author:
Affiliation:
1. School of Science, Xi’an University of Technology
2. School of Automation and Information Engineering, Xi’an University of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/19/18/19_19.20220247/_pdf
Reference31 articles.
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2. [2] M. Rahimo, et al.: “Next generation IGBT and package technologies for high voltage applications,” IEEE Trans. Electron Devices 64 (2017) 753 (DOI: 10.1109/TED.2017.2655485).
3. [3] H. Takahashi, et al.: “1200V reverse conducting IGBT,” IEEE Proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs (ISPSD) (2004) 133 (DOI: 10.1109/WCT.2004.239844).
4. [4] G. Deng, et al.: “A snapback-free RC-IGBT with alternating N/P buffers,” ISPSD (2017) 127 (DOI: 10.23919/ISPSD.2017.7988943).
5. [5] G. Deng, et al.: “A snapback-free reverse conducting insulated-gate bipolar transistor with discontinuous field-stop layer,” IEEE Trans. Electron Devices 65 (2018) 1856 (DOI: 10.1109/TED.2018.2817204).
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