1. [1] Visit [Online] http://www.itrs.net/ for latest version of International Technology Roadmap of Semiconductors. Technology working groups of Emerging Research Devices and Materials show the functional oxides and ReRAM.
2. [2] H. Akinaga and H. Shima, “Resistive Random Access Memory (ReRAM) Based on Metal Oxides,” Special Issue of IEEE Proceedings “Nanoelectronics Research for Beyond CMOS Information Processing,” vol. 98, no. 12, pp. 2237-2251, 2010.
3. [3] T. W. Hickmott, “Low-Frequency Negative Resistance in Thin Anodic Oxide Films,” J. Appl. Phys., vol. 33, no. 9, pp. 2669-2682, 1962.
4. [4] H. Shima and Y. Tamai, “Oxide nanolayer improving RRAM operational performance,” Microelectronics Journal, vol. 40, no. 3, pp. 628-632, 2009.
5. Switching properties of thin Nio films