Electrical and X-Ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN
Author:
Affiliation:
1. Toyohashi University of Technology (TUT)
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/transele/E107.C/9/E107.C_2023FUS0002/_pdf
Reference15 articles.
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2. [2] J. Hilsenbeck, W. Rieger, E. Nebauer, W. John, G. Tränkle, J. Würfl, A. Ramakrishan, and H. Obloh, “AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stability up to 400°C,” Phys. Stat. Sol. (a), vol.176, no.1, pp.183-187, 1999. 10.1002/(sici)1521-396x(199911)176:1%3C183::aid-pssa183%3E3.0.co;2-m
3. [4] M. Meer, A. Rawat, K. Takhar, S. Ganguly, and D. Saha, “Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN,” Microelectronic Eng., vol.219, 111144, 2020. 10.1016/j.mee.2019.111144
4. [5] H. Piao, M.S. Fuller, D. Miller, and N.S. McIntyre, “A study of thin film Au-Al alloy oxidation in ambient air by X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES), and secondary ion mass spectroscopy (SIMS),” Appl. Surf. Sci., vol.187, no.3-4, pp.266-274, 2002. 10.1016/s0169-4332(01)01038-8
5. [6] A.N. Bright, P.J. Thomas, M. Weyland, D.M. Tricker, C.J. Humphreys, and R. Davies, “Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy,” J. Appl. Phys., vol.89, no.6, pp.3143-3150, 2001. 10.1063/1.1347003
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