Alumina Passivation Films Prepared by Wet Process for Silicon Solar Cells Using Aluminum Isopropoxide as a Sol-Gel Precursor
Author:
Affiliation:
1. Seikei University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E100.C/1/E100.C_108/_pdf
Reference16 articles.
1. [1] M.A. Green, “The path to 25% silicon solar cell efficiency: History of silicon cell evolution,” Prog. Photovoltaics, vol.17, pp.183-189, 2009.
2. [2] B. Hoex, S.B.S. Heil, E. Langereis, M.C.M. van de Sanden, and W.M.M. Kessels, “Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3,” Appl. Phys. Lett. vol.89, 042112, 2006.
3. [3] G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H.F.W. Dekkers, S. De Wolf, and G. Beaucarne, “Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge,” Sol. Energy Mater. Sol. Cells, vol.90, pp.3438-3443, 2006.
4. [4] G. Dingemans and W.M.M. Kessels, “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells,” J. Vac. Sci. Technol. A, vol.30, 040802, 2012.
5. [5] R. Watanabe, M. Kawashima, and Y. Saito, “Film properties of alumina passivation layer for silicon solar cells prepared by spin-coating method,” Thin Solid Films, vol.590, pp.98-102, 2015.
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