Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist-Reference-Cited by-同舟云学术

Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist

Published:2023-10-01 Issue:10 Volume:E106.C Page:592-596
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

NISHIYAMA Shimpei¹,KATO Kimihiko²,LIU Yongxun²,MIZOKUCHI Raisei¹,YONEDA Jun³,KODERA Tetsuo¹,MORI Takahiro²

Affiliation:

1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

2. Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba

3. Tokyo Tech Academy for Super Smart Society, Tokyo Institute of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E106.C/10/E106.C_2022FUS0002/_pdf

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