Recent Progress and Applications of HfO<sub>2</sub>-Based Ferroelectric Memory-Reference-Cited by-同舟云学术

Recent Progress and Applications of HfO₂-Based Ferroelectric Memory

Published:2023-04 Issue:2 Volume:28 Page:221-229
ISSN:1007-0214
Container-title:Tsinghua Science and Technology
language:
Short-container-title:Tsinghua Sci. Technol.

Author:

Liu Xiao¹,Geng Xiangshun¹,Liu Houfang¹,Shao Minghao¹,Zhao Ruiting¹,Yang Yi¹,Ren Tian-Ling¹

Affiliation:

1. Beijing National Research Center for Information Science and Technology (BNRist), School of Integrated Circuits, Tsinghua University,Beijing,China,100084

Funder

National Natural Science Foundation of China

Beijing Innovation Center for Future Chip

Publisher

Tsinghua University Press

Subject

Multidisciplinary

Link

http://xplorestaging.ieee.org/ielx7/5971803/9906039/09906052.pdf?arnumber=9906052

Reference76 articles.

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2. Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects;müller;ECS J Solid State Sci Technol,2015

3. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

4. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

5. In-memory computing with resistive switching devices

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