Intrinsic supercurrent diode effect in NbSe2 nanobridge

Abstract

The significance of the superconducting diode effect (SDE) lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low temperatures have posed challenges for the conventional semiconductor diode, primarily due to its exceptionally high resistivity. In response to this limitation, various approaches have emerged to achieve the SDE, primarily involving the disruption of inversion symmetry in a two-dimensional superconductor through heterostructure fabrication. In this study, we present a direct observation of the supercurrent diode effect in a NbSe2 nanobridge with a length of approximately 15 nm, created using focused helium ion beam fabrication. Nonreciprocal supercurrents were identified, reaching a peak value of approximately 380 μA for each bias polarity at B zmax = ± 0.2 mT. Notably, the nonreciprocal supercurrent can be toggled by altering the bias polarity. This discovery of the SDE introduces a novel avenue and mechanism through nanofabrication on a superconducting flake, offering fresh perspectives for the development of superconducting devices and potential circuits.