Anomalous Carrier Enhancement with Lightly Mn Doping in Indium–Tin Oxide Thin Films Studied by Hard X-ray Photoemission Spectroscopy
Author:
Affiliation:
1. Graduate School of Human and Environmental Studies, Kyoto University, Sakyo, Kyoto 606-8501, Japan
2. SPring-8/JASRI, Sayo, Hyogo 679-5198, Japan
3. Institute for Liberal Arts and Sciences, Kyoto University, Sakyo, Kyoto 606-8501, Japan
Publisher
Physical Society of Japan
Link
https://journals.jps.jp/doi/pdf/10.7566/JPSJ.93.104801
Reference63 articles.
1. Optical Properties of Indium Oxide
2. Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy
3. Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy
4. Indium-oxide polymorphs from first principles: Quasiparticle electronic states
5. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3
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