Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission-Reference-Cited by-同舟云学术

Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission

Published:2023-06-26 Issue:2 Volume:26 Page:215-221
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:SPQEO

Author:

Tithy F.Z., ,Hussain S.,

Abstract

To mitigate the green gap problems existing in GaN/InGaN/AlGaN system on sapphire substrate, an In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN based LED structure on ScAlMgO4 (0001) substrate has been introduced for green light (525…565 nm) emission. On ScAlMgO4 (0001) substrate, 35% of In composition with 1.6 nm well thickness and only 15% of Al composition with 1.1 nm thick AlGaN as capping layer on top provide the best LED structure. It provides minimum equivalent lattice mismatch (0.01%) with reasonable overall elastic energy value (0.47 J/m2). Most importantly, it provides at least 10% brighter green light emission than that of sapphire based LED structure.

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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