Author:
Kazimov M.V., ,Ibragimov G.B.,
Abstract
Sb2Se3-GaSe eutectic composites were synthesized by the vertical Bridgman method. XRD analysis and structural study of the Sb2Se3-GaSe eutectics showed that Sb2Se3 inclusions were uniformly distributed in the GaSe matrice. Three eutectic points in the Sb2Se3-GaSe system were studied. The compositions of the three eutectics of 80, 55 and 40 wt.% Sb2Se3 formed in the Sb2Se3-GaSe systems, and the corresponding melting points of 776, 725 and 698 K were determined. Anisotropy of the electrical properties of the eutectic systems was observed. The anisotropy degree was ~103 depending on the crystallization direction.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)