Electrical and photoelectrical properties of n-InSe/p-CuInSe2 optical contact-Reference-Cited by-同舟云学术

Electrical and photoelectrical properties of n-InSe/p-CuInSe2 optical contact

Published:2004-12-16 Issue:4 Volume:7 Page:360-362
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Kovalyuk Z.D.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

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3. 3. J.R. Sites, X. Liu, Recent efficiency gains for CdTe and CuIn1-xGaxSe2 solar cells: What has changed? // Solar Energy Materials and Solar Cells 41/42, p. 373-379 (1996).

4. 4. V.L. Bakumenko, V.F. Chishko, Electrical properties of optical contacts of layered semiconductors // Fiz. Tekhn. Poluprov. 11 (10), p. 2000-2002 (1977).

5. 5. V.L. Bakumenko, Z.D. Kovalyuk, L.N. Kurbatov, V.G. Tagaev, V.F. Chishko, Properties of heterojunctions on the basis of indium monoselenide // Ibid. 12 (2), p. 374-377 (1978).

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