Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band

Abstract

Abstract We report the growth and characterization of InP/InAsP/InP nanowires (NWs) and NW LEDs (NW-LEDs), which emit light at telecom wavelengths. InP-based NWs were grown by selective-area metal-organic vapor-phase epitaxy, and a thin InAsP layer was embedded in the NWs. The NW exhibited emission lines in their low-temperature photoluminescence spectra, suggesting the formation of quantum dots (QDs) in the NW. NW-LED operation was demonstrated at both room and low temperatures in the telecom band, but it was found that the emission wavelength range and blueshift behavior induced by current injection differed considerably between room and low temperatures. Our results suggest that an efficient path for carrier injection into the active InAsP layer should be explored for NW-QD-based single-photon sources operating via current-injection.